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DS: Fachverband Dünne Schichten

DS 6: Focus Session: Innovative GaN-based High-power Devices: Growth, Characterization, Simulation, Application 2

DS 6.4: Hauptvortrag

Montag, 5. September 2022, 16:15–16:45, H17

Lateral and Vertical β-Ga₂O₃ Power Transistors for High-Voltage Applications — •Kornelius Tetzner¹, Michael Klupsch¹, Karina Ickert¹, Ralph-Stephan Unger¹, Zbigniew Galazka², Ta-Shun Chou², Saud Bin Anooz², Andreas Popp², Joachim Würfl¹, and Oliver Hilt¹ — ¹Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH), Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany — ²Leibniz-Institut für Kristallzüchtung (IKZ), Max-Born-Straße 2, 12489 Berlin, Germany

Beta gallium oxide (β-Ga₂O₃) with its ultra-wide bandgap of 4.8 eV has emerged as a promising semiconducting material for the fabrication of next-generation power electronic devices. The estimated dielectric strength of 8 MV/cm in combination with the expected Baliga’s figure of merit are promising indicators to pave the way for the realization of power devices with even higher breakdown voltages and efficiencies than their SiC and GaN counterparts. This presentation will give an overview on the current status of lateral and vertical β-Ga₂O₃ power transistor devices with a special emphasis on results obtained at FBH and IKZ. For both cases different concepts for bulk crystal growth, epitaxial layer structures and device designs suitable for reaching the targeted performance will be discussed especially in terms of breakdown voltage and channel current density. In this regard, certain material and device related challenges are identified which need to be addressed perspectively in order to overcome current breakdown limitations.