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DS: Fachverband Dünne Schichten

DS 6: Focus Session: Innovative GaN-based High-power Devices: Growth, Characterization, Simulation, Application 2

Montag, 5. September 2022, 15:00–16:45, H17

Organizers:
Bernd Witzigmann, University Erlangen-Nürnberg
Frank Bertram, Magdeburg University
Synopsis (see part I)

	15:00	DS 6.1	Hauptvortrag: Novel high power device structures: Enabling compact and integrated power ICs — •Elison Matioli
	15:30	DS 6.2	Hauptvortrag: Ab-initio investigations of V-pits and nanopipes in GaN — •Liverios Lymperakis, Su-Hyun Yoo, and Jörg Neugebauer
	16:00	DS 6.3	Metal micro-contacts deposited by focused electron and ion beam: impact on electrical properties — •Konstantin Wein, Gordon Schmidt, Frank Bertram, Silke Petzold, Peter Veit, Christoph Berger, André Strittmatter, and Jürgen Christen
	16:15	DS 6.4	Hauptvortrag: Lateral and Vertical β-Ga2O3 Power Transistors for High-Voltage Applications — •Kornelius Tetzner, Michael Klupsch, Karina Ickert, Ralph-Stephan Unger, Zbigniew Galazka, Ta-Shun Chou, Saud Bin Anooz, Andreas Popp, Joachim Würfl, and Oliver Hilt