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DS: Fachverband Dünne Schichten

DS 9: Thin Film Properties: Structure, Morphology and Composition (XRD, TEM, XPS, SIMS, RBS, AFM, ...) 3

DS 9.3: Vortrag

Dienstag, 6. September 2022, 10:00–10:15, H14

Structural analysis of Sc_xAl_1-xN thin films — •Rebecca Petrich¹, Younes Slimi¹, Hauke Honig², Lorenz Steinacker², Katja Tonisch¹, Raphael Kuhnen³, Dietmar Frühauf³, and Stefan Krischok¹ — ¹TU Ilmenau, FG Technische Physik I, IMN MacroNano, 98693 Ilmenau — ²TU Ilmenau, FG Werkstoffe der Elektrotechnik, IMN MacroNano, 98693 Ilmenau — ³Endress+Hauser SE+Co. KG, TTD Technologieentwicklung, 79689 Maulburg

The further and new development of functional materials is an important and constant research approach for the optimization of microelectromechanical systems. In the field of piezoelectric materials, AlN stands out due to its good piezoelectric properties and its CMOS compatibility, its very good thermal stability and high sound velocity. While the basic research for this material is considered to be largely completed, research for the scandium-based alloy Sc_xAl_1-xN is still in its infancy. The need for investigation is particularly high for alloys with scandium concentrations of more than x = 15%. For this purpose, Sc_xAl_1-xN thin films were deposited and analyzed using pulsed magnetron sputtering in a concentration range between x = 15% and 35%. Starting with the crystal orientation (X-ray diffractometry) and the layer composition (energy-dispersive X-ray spectroscopy) through to the surface roughness (atomic force microscopy), optical parameters for determining the layer thickness and dielectric function (spectroscopic UV-Vis ellipsometry) were also examined and compared to pure AlN. In addition, the homogeneity of the layer properties was examined over different radii on 4" Si wafers.