Regensburg 2022 – scientific programme

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DS: Fachverband Dünne Schichten

DS 9: Thin Film Properties: Structure, Morphology and Composition (XRD, TEM, XPS, SIMS, RBS, AFM, ...) 3

DS 9.5: Talk

Tuesday, September 6, 2022, 10:30–10:45, H14

Thermal Laser Epitaxy of Refractory Metals — •Lena Nadine Majer, Hongguang Wang, Wolfgang Braun, Peter A. van Aken, Jochen Mannhart, and Sander Smink — Max Planck Institute for Solid State Research, Heisenbergstraße 1, 70569 Stuttgart, Germany

In thermal laser epitaxy, both the substrate and the individual evaporation sources are heated by high-power continuous-wave lasers. This method combines the advantages of MBE and PLD, allowing the efficient thermal evaporation and epitaxial deposition of practically any combination of elements from the periodic table. We demonstrate and discuss the epitaxial growth of refractory metals on c-cut sapphire. As examples we present Ru and Ta growth, because they are of particular interest for many technological applications. We have optimized the growth parameters to obtain epitaxial films of superior quality, which are apparently devoid of defects over large areas. The films have been characterized by AFM, RHEED, STEM, and X-ray analysis, revealing that the layers grow single phase, with a low surface roughness and that the interface between the layer and the substrate is atomically sharp.