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15:00 |
HL 10.1 |
Degradation of the electrooptical properties of UVB LEDs observed by temperature dependent electroluminescence spectroscopy — •Jakob Höpfner, Priti Gupta, Martin Guttmann, Jan Ruschel, Johannes Glaab, Tim Kolbe, Arne Knauer, Tim Wernicke, Markus Weyers, and Michael Kneissl
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15:15 |
HL 10.2 |
Short pulse operation of (Al,In)GaN laser diodes to increased linewidth and decreased coherence for laser displays — •Jannina J. Tepaß, Lukas Uhlig, Dominic Kunzmann, Georg Brüderl, and Ulrich T. Schwarz
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15:30 |
HL 10.3 |
Investigation of lateral charge carrier diffusion via micro-photoluminescence in InGaN MQWs and SQWs — •Conny Becht, Ulrich T. Schwarz, Michael Binder, Bastian Galler, Jürgen Off, Maximilian Tauer, Alvaro Gomez Iglesias, Heng Wang, and Martin Strassburg
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15:45 |
HL 10.4 |
Threshold and gain measurements of AlGaN-based UVC lasers — •Markus Blonski, Giulia Cardinali, Bernd Witzigmann, Norman Susilo, Daniel Hauer Vidal, Martin Guttmann, Tim Wernicke, and Michael Kneissl
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16:00 |
HL 10.5 |
Drift-diffusion simulation of UVC-LEDs with varied emission wavelength — •F. Bilchenko, A. Muhin, M. Guttman, T. Wernicke, F. Römer, B. Witzigmann, and M. Kneissl
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16:15 |
HL 10.6 |
Realizing tunnel junctions in AlGaN-based UVC light emitting diodes emitting at 232 nm — •Verena Montag, Frank Mehnke, Martin Guttmann, Luca Sulmoni, Christian Kuhn, Johannes Glaab, Tim Wernicke, Markus Weyers, and Michael Kneissl
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16:30 |
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15 min. break
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16:45 |
HL 10.7 |
Influence of the AlGaN MQW growth temperature on the performance characteristics of DUV-LEDs with emission at 235 nm — •Marcel Schilling, Norman Susilo, Giulia Cardinali, Anton Muhin, Frank Mehnke, Tim Wernicke, Michael Kneissl, and Jakob Höpfner
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17:00 |
HL 10.8 |
Temperature dependent electroluminescence spectroscopy on AlGaN-based 235nm far-UVC LEDs with different active region growth temperature — •Paula Vierck, Jakob Höpfner, Martin Guttmann, Marcel Schilling, Luca Sulmoni, Anton Muhin, Tim Wernicke, and Michael Kneissl
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17:15 |
HL 10.9 |
UVC-LEDs grown on HTA-AlN templates with low dislocation densities and high Si doping for strain management — •Sarina Graupeter, Michael Gail, Giulia Cardinali, Massimo Grigoletto, Sylvia Hagedorn, Tim Wernicke, Markus Weyers, and Michael Kneissl
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17:30 |
HL 10.10 |
Distributed polarization doping for 265 nm UVC LEDs — •Massimo Grigoletto, Sarina Graupeter, Anton Muhin, Fedir Bilchenko, Eviathar Ziffer, Norman Susilo, Tim Wernicke, and Michael Kneissl
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17:45 |
HL 10.11 |
Temperature dependent photoluminescence spectroscopy of self-assembled InGaN superlattices embedded in GaN Nanowires — •Rudolfo Hötzel, Manuel Alonso Orts, Tim Grieb, Jörg Schörmann, Stephan Figge, and Martin Eickhoff
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18:00 |
HL 10.12 |
Luminescence Characteristics of GaInN/GaN Multi Quantum Wells with Ga and N Polarity — •Samar Hagag, Malte Schrader, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
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18:15 |
HL 10.13 |
Pump-probe studies with varying excitation wavelengths applied for GaInN/GaN single quantum wells — •Malte Schrader, Rodrigo De Vasconcellos Lourenco, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
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