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HL: Fachverband Halbleiterphysik

HL 10: Nitrides

HL 10.11: Vortrag

Montag, 5. September 2022, 17:45–18:00, H34

Temperature dependent photoluminescence spectroscopy of self-assembled InGaN superlattices embedded in GaN Nanowires — •Rudolfo Hötzel¹, Manuel Alonso Orts¹, Tim Grieb², Jörg Schörmann¹, Stephan Figge¹, and Martin Eickhoff¹ — ¹University of Bremen, Institute of Solid State Physics, 28359 Bremen, Germany — ²I. Physikalisches Institut, Justus-Liebig-Universität, Heinrich-Buff-Ring 16, 35392 Giessen, Germany

In this work, the structure and optical properties of single InGaN/GaN Nanowires grown by plasma assisted molecular beam epitaxy have been analyzed by micro photoluminescence (PL), scanning transmisssion electron microscopy (STEM) and energy dispersive X-rayspectroscopy (EDX). These nanowires consist of an indium rich core that contains a self assembled InGaN superlattice within a GaN shell. In order to understand the origin of their optical properties, PL was combined with STEM analysis to idendify single nanowire structures. Temeperature-dependent as well as polarized PL were conducted on isolated nanowires and revealed an emission consisting of broader bands at room temperature and multiple narrow peak superpositions at low temperatures. The overall emission ranges from 1,8 eV to up to 2,9 eV. One contributing factor to their emission is the indium distribution within the superlattice, which was determined by EDX. A polarization dependence of the PL signal with respect to the growth direction was observed at 4K and room temperature and ascribed to the indium rich core (parallel contributions) and self assembled superlattice (perpendicular contributions).