Regensburg 2022 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 10: Nitrides

HL 10.12: Talk

Monday, September 5, 2022, 18:00–18:15, H34

Luminescence Characteristics of GaInN/GaN Multi Quantum Wells with Ga and N Polarity — •Samar Hagag, Malte Schrader, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter — Institut f. Angewandte,TU Braunschweig,Germany

The optical properties of Ga- and N-polar GaInN/GaN Multi Quantum Wells (MQW) grown on sapphire and bulk N-polar GaN substrates, respectively, using metal-organic chemical vapor deposition were investigated using photoluminescence (PL) and time-resolved photoluminescence (TRPL) spectroscopy. The low temperature PL spectrum of N-polar GaInN/GaN MQW showed a reduced PL intensity and broad emission peak compared to their Ga-polar counterparts and shorter PL decay times of N-polar GaInN/GaN MQW were observed in low temperature TRPL measurements. Using non-resonant excitation, N-polar GaN PL spectra at low temperature have shown the presence of luminescence lines associated with structural defects of the type I1 basal-plane stacking faults. The low PL intensity and short PL decay time at low temperature of N-polar GaInN/GaN MQW indicate the existence of non-radiative recombination at low temperature likely caused by partial dislocations associated with the stacking faults. For the fabrication of pyramidal nanostructures serving as nanooptical light emitters, wet etching of N-polar GaInN/GaN MQW in KOH solution has been used. The etched N-polar samples have shown an improved luminescence and the absence of stacking fault-related luminescence lines. Optimization of the growth procedure for N-polar GaInN/GaN MQW is required in order to reduce structural defects.