Regensburg 2022 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 12: Quantum Dots and Wires 3: Growth

HL 12.3: Vortrag

Dienstag, 6. September 2022, 10:15–10:30, H32

Towards MOVPE-grown c-band emitting InAs quantum dots on a Si (001) substrate based on heterogeneous integration of membrane and epitaxial regrowth — •Ponraj Vijayan, Robert Sittig, Simone Luca Portalupi, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen, Center for Integrated Quantum Science and Technology (IQST) and SCoPE, Universität Stuttgart, Germany

Silicon photonics for telecommunications applications has garnered much attention in recent decades. The optical transparency and the large refractive index contrast of silicon in the telecommunication wavelengths allow the implementation of high-density photonic integrated circuit. The drawback of silicon photonics is that there is no native light source due to the indirect band-gap nature of silicon. Integration of III-V material, which offers outstanding optical emission properties, on silicon provides a potential solution. The monolithic integration i.e. the direct growth of III-V materials on silicon is the most desired approach. However, it is very challenging because of large lattice mismatch and material polarity difference between the III-V materials and silicon. An alternate monolithic approach is through heterogeneous integration of thin III-V membrane using direct bonding techniques followed by epitaxial regrowth. Our group has previously developed InAs QD/InGaAs MMB/GaAs substrate structures for long-distance optical fiber applications. Here, we report on the route to monolithically integrate the telecom C-band emitting InAs QD on a wafer bonded GaAs/Si substrate using MOVPE.