Regensburg 2022 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 12: Quantum Dots and Wires 3: Growth

HL 12.5: Vortrag

Dienstag, 6. September 2022, 10:45–11:00, H32

Epitaxial growth and characterization of multilayer site-controlled InGaAs quantum dots based on the buried stressor method — •Imad Limame, Ching-Wen Shih, Alexej Koltchanov, Moritz Plattner, Johannes Shall, Sven Rodt, and Stephan Reitzenstein — Institute for Solid State Physics, Technical University of Berlin, Germany

The buried-stressor epitaxial growth concept is a prim approach for the realization of site- and number- controlled quantum dots (QDs) with optical high quality. This advanced technique has a wide application spectrum including nanophotonics devices such as single-photon sources (SPSs), microlasers, and emitter-arrays for neuromorphic photonic computing. Here, we report on the development of multi-layer site-controlled QDs (ML-SCQDs) integrated in micropillar laser arrays with low threshold pump power. The buried-stressor technique utilizes a partially oxidized buried AlAs aperture to engineer the strain profile in the following GaAs capping layer and control the position and number of the QDs at the GaAs surface. Thanks to the unetched GaAs surface, the buried-stressor SCQDs exhibits excellent optical properties in comparison to other SCQDs growth approaches, using for instance nano-hole arrays as nucleation centers. Additionally, after integration into micropillar cavities the partially oxidized aperture results in additional confinement of the optical mode in lateral direction, leading to lower mode volume and higher Q-factor for a given micropillar geometry. The grown ML-SCQDs are investigated using atomic force microscopy , micro-photo- and cathodoluminescence spectroscopy.