Regensburg 2022 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 15: 2D Materials 3 (joint session HL/CPP/DS)
HL 15.6: Vortrag
Dienstag, 6. September 2022, 11:15–11:30, H36
Dielectric screening effects on the exciton binding-energy and exciton diffusion in a 2D material — •Lukas Gümbel, Philip Klement, and Sangam Chatterjee — Institute of Experimental Physics I and Center for Materials Research (ZfM/LaMa), Justus Liebig University Giessen, Heinrich-Buff-Ring 16, Giessen D-35392, Germany
Two-dimensional semiconductors have proven to be candidates for numerous applications in the field of optoelectronics. Especially transition-metal dichalcogenides such as WS2 have attracted extensive research due to the direct band-gap emerging in the monolayer limit. The optoelectronic properties are dominated by tightly-bound excitons denoted as A, B, and C. As the electric field lines of the excitonic states extend into the surrounding material, the energy states are subject to dielectric screening effects. Here we show that stronger dielectric screening equally shifts the excitonic ground state energies of the A-, B-, and C-excitons in WS2 to lower energies. We find a shift of 20 meV in monolayers encapsulated in hBN and observe a non-hydrogenic Rydberg-series yielding a quasiparticle band-gap energy of 2.33 eV with an 1s excitonic binding energy of 0.30 eV. Additionally, we study exciton diffusion in different dielectric environments yielding a diffusion coefficient of 9 cm2/s. These results complement the underlying theory and may pave the way to a deeper understanding of screening effects in various 2D-Materials.