Regensburg 2022 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 17: Quantum Dots and Wires 4: Devices
HL 17.3: Talk
Wednesday, September 7, 2022, 10:00–10:15, H32
Optically induced in-situ strain-tuning of InGaAs quantum dots for nanophotonic devices — •Ching-Wen Shih1, Marco Holzer2, Imad Limame1, Lasse Kosiol1, Sourish Banerjee2, Aris Koulas-Simos1, Veeresh Deshpande2, Cathrine Dubourdieu2,3, and Stephan Reitzenstein1 — 1Institut für Festkörperphysik, Technische Universität Berlin, Berlin, Germany — 2Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Berlin, Germany — 3Freie Universität Berlin, Physical Chemistry, Berlin, Germany
Self-assembled semiconductor quantum dots (QDs) have been widely incorporated in solid-state cavities to enable quantum technologies. However, the nature of self-assembled QDs poses a big challenge to achieving controlled emitter-cavity and emitter-emitter coupling as it not only requires an accurate spatial positioning, but also a precise spectral matching of the system. Here, we report on the MOCVD growth and fabrication of micropillar-like nanophotonic light sources consisting of strain-tunable InGaAs QDs with ALD-deposited HfO2 thin film cladding. We show that the emission energy of QDs can be in-situ tuned by thermally annealing the HfO2 film with a focused laser beam integrated in a μ-photoluminescence setup under cryogenic temperature. We demonstrate a tunability up to 2 meV without QDs degradation. Furthermore, we successfully tuned two separated QD emission peaks from the same structure into resonance. The developed technique paves the path for scaling up the number of coupled QDs in semiconductor nanophotonic devices.