Regensburg 2022 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 17: Quantum Dots and Wires 4: Devices
HL 17.4: Talk
Wednesday, September 7, 2022, 10:15–10:30, H32
Optical properties of In(Ga)As QDs emitting in the telecom C-band grown on a non-linear metamorphic buffer layer — •Pascal Pruy, Cornelius Nawrath, Robert Sittig, Simone Luca Portalupi, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen, Center for Integrated Quantum Science and Technology(IQST) and SCopE, University of Stuttgart, Allmandring 3, 70569 Stuttgart
Semiconductor Quantum Dots (QDs) are excellent structures for the generation of non-classical light states with outstanding performance regarding single-photon purity, photon indistinguishability and entanglement fidelity, making them promising sources for currently researched subjects such as quantum computation and quantum communication. The telecom C-band (1530-1565 nm) spectral regime is especially sought-after for fiber-based implementations of these applications due to the absorption minimum in the globally used silica fiber network. On the mature and promising GaAs material platform, the telecom C-band can be reached using a metamorphic buffer (MMB) layer and the recent progress on such QDs has attracted great interest.
While so far MMBs with a thickness of 1080nm have been employed resulting in a nominal 3-λ cavity, a 1-λ cavity would be greatly beneficial for more elaborate photonic structures regarding brightness and coherence. Here we report on the optical properties such as brightness, coherence and purity of In(Ga)As Quantum Dots emitting in the telecom C-band spectral regime on a novel metamorphic buffer layer compatible with 1-λ cavities.