Regensburg 2022 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 17: Quantum Dots and Wires 4: Devices
HL 17.9: Vortrag
Mittwoch, 7. September 2022, 12:00–12:15, H32
Fabrication and Electrical Characterisation of Junctionless Nanowire Transistors for Detection of Atmospheric Radicals and Other Gases — •Sayantan Ghosh1, Muhammad Bilal Khan1, Vaishali Vardhan2, Ulrich Kentsch1, Slawomir Prucnal1, Subhajit Biswas2, Justin Holmes2, Artur Erbe1, and Yordan M. Georgiev1,3 — 1Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany — 2School of Chemistry, University College Cork, Cork, Ireland — 3Institute of Electronics, Bulgarian Academy of Sciences, Sofia, Bulgaria
Silicon junctionless nanowire transistors (JNTs) have shown excellent sensitivity to record-low concentrations of the protein streptavidin in liquid phase. However, JNTs have not yet been tested for sensing in gas phase. Here we present the fabrication and initial electrical characterisation of JNT-based electronic sensors for detection of atmospheric free radicals such as hydroxyl (*OH) and nitrate (*NO3), which are the main drivers of chemical processes in the atmosphere. The aim of this work is to develop small, low-cost JNT-based nanosensors for radical detection. Silicon-on-insulator wafers were doped by ion implantation and flash-lamp annealing. Device patterning was based on electron beam lithography, inductively-coupled reactive ion etching, metal deposition and lift-off. Initial electrical characterisation and gas sensing experiments on fabricated devices proved their good performance and potential suitability for detection of atmospheric free radicals.