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09:30 |
HL 18.1 |
Heavily doped Zinc Oxide with plasma frequencies in the telecommunication wavelength range — •Alexander Koch, Hongyan Mei, Jura Rensberg, Martin Hafermann, Jad Salman, Chenghao Wan, Raymond Wambold, Daniel Blascke, Heidemarie Schmidt, Jürgen Saalfeld, Sebastian Geburt, Mikhail Kats, and Carsten Ronning
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09:45 |
HL 18.2 |
Side-by-side display of optical and resistive H2S gas sensing properties of pristine and gold functionalized ZnO nanowires — •Angelika Kaiser, Tanja Mauritz, Joachim Bansmann, Ulrich Herr, and Klaus Thonke
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10:00 |
HL 18.3 |
Growth window of α-Ga2O3 on m-plane sapphire by pulsed laser deposition — •C. Petersen, S. Vogt, M. Kneiß, H. von Wenckstern, and M. Grundmann
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10:15 |
HL 18.4 |
Simulation of Switching Processes Inside Bilayer Valence Change Memory Cells by a Drift-Diffusion Model — •Nils Sommer, Stephan Menzel, and Rainer Waser
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10:30 |
HL 18.5 |
Phonons, Isotope Effects, and Point Defects in β-Ga2O3 — •Benjamin M. Janzen, Piero Mazzolini, Roland Gillen, Andreas Falkenstein, Vivien F. S. Peltason, Hans Tornatzky, Daniel Cierpinsky, Andrea Ardenghi, Manfred Martin, Janina Maultzsch, Roberto Fornari, Zbigniew Galazka, Oliver Bierwagen, and Markus R. Wagner
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10:45 |
HL 18.6 |
Epitaxial ZnO thin films and NWs — •Maximilian Kolhep, Margit Zacharias, and Jürgen Bläsing
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11:00 |
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15 min. break
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11:15 |
HL 18.7 |
Investigation of CuBrxI1−x thin films and CuI bulk material — •Michael Bar, Evgeny Krüger, Steffen Blaurock, Stefan Merker, Holger von Wenckstern, Harald Krautscheid, and Marius Grundmann
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11:30 |
HL 18.8 |
A Koopman's compliant exchange correlation potential for semiconductors — •Michael Lorke, Peter Deak, and Thomas Frauenheim
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11:45 |
HL 18.9 |
The contribution has been withdrawn.
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12:00 |
HL 18.10 |
Conduction channels in polycrystalline copper iodede thin films — •Tillmann Stralka
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12:15 |
HL 18.11 |
The contribution has been withdrawn.
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