Regensburg 2022 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 18: Oxide Semiconductors (joint session HL/KFM)
HL 18.1: Vortrag
Mittwoch, 7. September 2022, 09:30–09:45, H33
Heavily doped Zinc Oxide with plasma frequencies in the telecommunication wavelength range — •Alexander Koch1, Hongyan Mei2, Jura Rensberg1, Martin Hafermann1, Jad Salman2, Chenghao Wan2,5, Raymond Wambold2, Daniel Blascke3, Heidemarie Schmidt3, Jürgen Saalfeld4, Sebastian Geburt4, Mikhail Kats2,5,6, and Carsten Ronning1 — 1Institute for Solid State Physics, Friedrich Schiller University Jena, 07743 Jena, Germany — 2Department of Electrical and Computer Engineering, University of Wisconsin Madison, Madison, Wisconsin 53706, USA — 3Leibniz Institute of Photonic Technology, 07745 Jena, Germany — 4Innovavent GmbH, 37077 Göttingen, Germany — 5Department of Materials Science and Engineering, University of Wisconsin Madison, Madison, Wisconsin 53706, USA — 6Department of Physics, University of Wisconsin Madison, Madison, Wisconsin 53706, USA
We demonstrate high doping of ZnO by a combination of Ga ion implantation using a focused ion beam (FIB) system and post-implantation laser and flash lamp annealing. While ion implantation allows for the incorporation of impurities with nearly arbitrary concentrations, the additional optical annealing processes enable dopant activation close to the solid-solubility limit of Ga in ZnO. By this means, we achieved highly-doped ZnO:Ga with free-carrier concentrations of 9.5 · 1020 cm−3, which results in a plasma wavelength shorter than the telecommunication wavelength of 1.55 µm. Thus, ZnO:Ga is a very promising plasmonic material for optical applications in the near-infrared spectral region.