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HL: Fachverband Halbleiterphysik

HL 19: Materials and Devices for Quantum Technology 1

HL 19.10: Vortrag

Mittwoch, 7. September 2022, 12:30–12:45, H34

Single-electron Shuttling by Si/SiGe Quantum Bus — •Ran Xue, Inga Seidler, Tom Struck, Simon Humphol, Tobias Hangleiter, Hendrik Bluhm, and Lars R. Schreiber — JARA-FIT Institute for Quantum Information, Forschungszentrum Jülich GmbH and RWTH Aachen University, Aachen, Germany

The electron-spin in gate-defined quantum dots in a Si/SiGe heterostructure is one of the most promising qubits for scalable quantum computing. Qubit gates beyond the error-correction threshold have been widely investigated, however, the long range coupling of qubits remains challenging. Here we study the feasibility of single electron shuttling by forming a propagating sinusoidal potential in a gate-defined 1-dimensional channel. A 99.42±0.02% high single-electron shuttle fidelity over a distance of 420 nm has been demonstrated in our recent research. [1] It provides adiabatic movement of a quantum dot filled by a single electron representing the qubit. An extension to 10 µ m long devices is in progress. The number of control lines is intrinsically independent from the shuttle length, therefore, no additional scalability complexity regarding signal generation and wiring is expected. Our concept is compatible with industrial CMOS fabrication lines and ultimately might lead to transport spin qubit information without much loss of spin-coherence.

[1] Seidler, I. et al., Conveyor-mode single-electron shuttling in Si/SiGe for a scalable quantum computing architecture. arXiv:2108.00879 (2021).