Regensburg 2022 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 19: Materials and Devices for Quantum Technology 1
HL 19.8: Vortrag
Mittwoch, 7. September 2022, 12:00–12:15, H34
Top-down nanofabrication of silicon nanopillars hosting telecom photon emitters — •Nagesh S. Jagtap1,2, Michael Hollenbach1,2, Ciarán Fowley1, Juan Baratech1, Verónica Guardia-Arce1, Ulrich Kentsch1, Anna Eichler-Volf1, Nikolay V. Abrosimov3, Artur Erbe1, ChaeHo Shin4, Hakseong Kim4, Manfred Helm1,2, Woo Lee4, Georgy V. Astakhov1, and Yonder Berencén1 — 1Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany — 2Technische Universität Dresden, 01062 Dresden, Germany — 3Leibniz-Institut für Kristallzüchtung, 12489 Berlin, Germany — 4Korea Research Institute of Standards and Science, 34113 Daejeon, Republic of Korea
Silicon, a ubiquitous material in modern computing, is an emerging platform for realizing a source of indistinguishable single-photons on demand. The integration of recently discovered single-photon emitters in silicon into photonic structures is advantageous to exploit their full potential for integrated photonic quantum technologies [1] [2]. Here, we show the integration of an ensemble of telecom photon emitters in a two-dimensional array of silicon nanopillars. We developed a top-down nanofabrication method, enabling the production of thousands of individual nanopillars per square millimeter with state-of-the-art photonic-circuit pitch, all the while being free of fabrication-related radiation damage defects. We found a waveguiding effect of the 1278 nm G-center emission along individual pillars accompanied by improved brightness, compared to that of bulk silicon.