Regensburg 2022 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 2: Spin Phenomena in Semiconductors

HL 2.4: Talk

Monday, September 5, 2022, 10:30–10:45, H31

Resonant spin amplification in Faraday geometry — •Nedelea Vitalie¹, Philipp Schering², Dmitry Smirnov³, Eiko Evers², Evgeny Zhukov^1,3, Dmitri Yakovlev^1,3, Manfred Bayer^1,3, Uhrig Götz², and Alex Greilich¹ — ¹Experimental Physics 2, TU Dortmund University, Dortmund, Germany — ²Condensed Matter Theory, TU Dortmund University, Dortmund, Germany — ³St. Petersburg, Russia

The possibility to use the spin degree of freedom for quantum information continues to drive research on semiconductors nanostructures. The main characteristic in this field is defined by the lifetime of the information or the spin coherence time. One of the most basic parameters of the spin dynamics is the g factor, which is often anisotropic in semiconductor nanostructures. Its transverse component can be measured very precisely when a magnetic field is applied in Voigt geometry by means of the resonant spin amplification effect (RSA).

Model consideration predict [1] that the realization of the RSA effect in Faraday geometry, where a magnetic field is applied parallel to the optically induced spin polarization, can be realized for a central spin interacting with a fluctuating spin environment. To confirm theory, we chose an ensemble of singly-charged (In,Ga)As/GaAs quantum dots, where the resident electron spin interact with the surrounding nuclear spins. The observation of RSA in Faraday geometry requires intense pump pulses with a high repetition rate and can be enhanced by means of the spin-inertia effect. Potentially, it provides the most direct and reliable tool to measure the longitudinal g factor of the charge carrier.