Regensburg 2022 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 22: Heterostructures, Interfaces and Surfaces
HL 22.8: Talk
Wednesday, September 7, 2022, 17:15–17:30, H33
Towards predictive modeling of optical properties of quantum dots under externally applied stress — •Petr Klenovsky1,2, Xueyong Yuan3, Saimon Filipe Covre da Silva3, and Armando Rastelli3 — 1Department of Condensed Matter Physics, Faculty of Science, Masaryk University, Brno, Czech Republic — 2Czech Metrology Institute, Brno, Czech Republic — 3Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Austria
GaAs quantum dots (QDs) have been found in the past to be an exceptionally good platform for construction of the light emitters. They have also advantageous properties for spin physics because of the absence of strain and strain inhomogeneity. Still, strain is important to achieve quadrupolar splitting, e.g., to build up a quantum register with nuclear spins. Understanding and quantitative prediction of strain-induced effects will be important to guide future optimization, since a trial and error procedure is not acceptable in view of the huge parameter space available for GaAs QDs (e.g. WL thickness tunable at will). Former attempts have qualitatively reproduced results but failed to achieve the quantitative agreement, e.g., bright-dark exciton splitting or used unphysical assumptions. That was further exacerbated by the lack of knowledge of the exact applied strain configuration.
Here we go beyond by combining precisely determined strain and QD properties with dedicated calculations using k·p and correlated configuration interaction (CI) methods. We show for the first time quantitative agreement between experiment and theory for strained GaAs QDs.