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HL: Fachverband Halbleiterphysik

HL 24: Functional Semiconductors for Renewable Energy Solutions (joint session HL/KFM)

HL 24.2: Vortrag

Mittwoch, 7. September 2022, 15:15–15:30, H36

How could the heating process reduce the crystal damage of semiconductors? — •Khalid Lahmidi, Jale Schneider, Andreas Brand, Sebastian Roder, and Andreas Bett — Fraunhofer Institute for Solar Energy Systems, Heidenhofstr. 2, 79110 Freiburg, Germany

Laser material processing can no longer be imagined away from the production chains in semiconductor industries. While being a precise, fast and wear-free processing tool, high intensity laser irradiation can also induce damage within the material, e.g. crystal damage, compromising the device quality. However, this damage can partly be healed or even prevented by an accompanying (laser) heating process.

In our laser lab, we built up a flexible laser heating setup with a spatial light modulator (SLM) as the core element. The setup allows to locally heat work pieces with different beam shapes with an intensity up to 220 W/cm* employing a cw-infrared laser source. Current research focuses on the temperature distribution in dependence of beam shape and beam dwell time on a specific position. Comsol based simulations support the experiments. Eventually, the heating beam will be overlaid to the process beam in use cases such as laser contact opening at lowered ablation thresholds or laser metal bonding for solar cell manufacturing. The damage after laser process with and without heating will be analyzed via microscopy.