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HL: Fachverband Halbleiterphysik
HL 24: Functional Semiconductors for Renewable Energy Solutions (joint session HL/KFM)
HL 24.6: Vortrag
Mittwoch, 7. September 2022, 16:15–16:30, H36
Simulation of the reaction kinetics of the ASi-Sii-defect — •Kevin Lauer1,2, Katharina Peh2, Wichard Beenken2, Erich Runge2, and Stefan Krischok2 — 1CiS Forschungsinstitut für Mikrosensorik GmbH, Konrad-Zuse-Str. 14, 99099 Erfurt, Germany — 2TU Ilmenau, Institut für Physik und Institut für Mikro- und Nanotechnologien, 98693 Ilmenau, Germany
Light-induced degradation (LID) is a severe problem for silicon photo-sensitive devices like solar cells and photo detectors. LID reaction kinetics may be explained by the ASi-Sii-defect model. [1] This model consists of seven states. The transitions between these states are assumed to be first order equilibrium reactions, which can be mathematically treated by a system of linear differential equation. [1] This is numerically solved and compared to the LID cycle using well-known together with some estimated reaction constants.
[1] K. Lauer, C. Möller, C. Tessmann, D. Schulze, and N. V. Abrosimov, "Activation energies of the InSi-Sii defect transitions obtained by carrier lifetime measurements", physica status solidi (c), vol. 14, no. 5, p. 1600033, 2017.