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HL: Fachverband Halbleiterphysik

HL 25: Poster 1

HL 25.17: Poster

Mittwoch, 7. September 2022, 18:00–20:00, P2

Modification of charge transport in single layer MoS2 — •Zahra Fekri¹, Phanish Chava¹, Gregor Hlawacek¹, Vivek Koladi², Tommaso Venanzi³, Wajid Awan¹, Antony George⁴, Andrey Turchanin⁴, Kenji Watanabe⁵, Takashi Taniguchi⁵, Manfred Helm¹, and Artur Erbe¹ — ¹Helmholtz Zentrum Dresden Rossendorf, Dresden, Germany — ²Imec, Leuven, Belgium — ³Sapienza University of Rome, Rome, Italy — ⁴Friedrich Schiller University, Jena, Germany — ⁵National Institute for Materials Science, Tsukuba, Japan

Ion beam irradiation is a technique that can be used to alter the electrical and optical properties of two-dimensional (2D) materials through defect creation. In this work, we used 5-7.5 keV helium and neon ions to modify charge transport in monolayer molybdenum disulfide (MoS₂). Electrical characterization was performed in-situ immediately after ion beam irradiation. Raman and photoluminescence spectroscopy were implemented to further characterize the effect of ion irradiation on MoS₂. Our experiments show that the electrical properties of MoS₂-based transistors strongly depend on the nature of the substrate and the specific ion and dose used. Although 10¹²-10¹³ helium ions/cm² contribute to the increase in the current level, a similar dose of neon ions deteriorates the channel. To examine the role of the substrate, few-layer hexagonal boron nitride (h-BN) was used as an intermediate layer between MoS₂ and the Si/SiO₂ substrate. MoS₂ samples on h-BN show different electrical behaviour during ion irradiation as compared to the MoS₂ flakes which were directly placed on SiO₂.