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HL: Fachverband Halbleiterphysik

HL 25: Poster 1

HL 25.22: Poster

Mittwoch, 7. September 2022, 18:00–20:00, P2

Nucleation of hBN on HOPG in conventional MBE — •Constantin Hilbrunner, Juli Zhang, Joerg Malindretos, and Angela Rizzi — IV. Physikalisches Institut - Georg-August-Univiersität Göttingen

Due to its large bandgap of around 5.9 eV and due to its high breakdown voltage as well as its natural inertness, hexagonal boron nitride (hBN) is a promising substrate and encapsulation material to study the intrinsic properties of two-dimensional materials. Due to thermodynamics, the growth of hBN requires very high substrate temperatures. At present, the hBN films grown by molecular beam epitaxy (MBE) on non-metallic substrates with highest structural quality were fabricated using substrate temperatures between 1300^∘C and 1600^∘C not achievable using conventional systems.

In a different approach, we intend to utilize laser assisted heating during MBE. Here, we report on our preliminary results concerning the nucleation of hBN on HOPG at conventional substrate temperatures for varying B fluxes and the heating characteristic of the substrate surface in response to ns laser pulses.