Regensburg 2022 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 25: Poster 1

HL 25.36: Poster

Wednesday, September 7, 2022, 18:00–20:00, P2

Investigation of Electrically-Active Dopants in Sulfur-Hyperdoped Silicon Using Resistance Measurements — •Skrollan Detzler, Christoph Flathmann, and Michael Seibt — 4th Institute of Physics - Solids and Nanostructures, University of Goettingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany

Due to its abundance and particularly adjustable electric properties, silicon has become the dominating material in solar cell fabrication as of today. One approach to further increase the efficiency of silicon solar cells is to introduce an intermediate band into the band gap, allowing for broader absorption of the sunlight spectrum. This could be realized by doping the material with deep-level impurities far beyond its equilibrium solubility limit. In this study, we analyze sulfur-hyperdoped silicon, produced by femtosecond pulsed laser annealing, resulting in inhomogeneous regions reaching from the surface into the bulk material. To gain information on electrically-active dopants across different regions, resistance measurements using micromanipulators and scanning electron microscopy imaging were performed.