Regensburg 2022 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 25: Poster 1

HL 25.38: Poster

Wednesday, September 7, 2022, 18:00–20:00, P2

Electrochemical epitaxial (200) PbSe submicron plates on single layer graphene for ultrafast infrared response — •Chan Yang, Shuanglong Feng, Yinye Yu, Jun Shen, Xingzhan Wei, and Haofei Shi — Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences

Highly efficient near and medium-wave infrared detection at room temperature is considered one of the most intensive studies due to their robust detection in foggy weather or other low visibility conditions. 2D atomic layer graphene has an unconventional broad optical spectrum and high carrier mobility properties for the next generation electronics and optoelectronics device. The single-layer graphene has a lower quantum efficiency, and the PbSe has a direct narrow bandgap with a highly sensitive infrared response. Here, we examine the growth mechanism of high quality-oriented (200) PbSe crystals on a single atomic layer graphene using the electrochemical atomic layer epitaxy growth method in an aqueous electrolyte. The crystalline phase and density of nucleating seeds controlled by changing electrodeposition parameters are crucial for determining the submicron-crystal geometry. It is revealed that the controllable growth orientation and nucleation of PbSe crystals are realized by combining underpotential deposition of Pb and overpotential deposition of Se. The PbSe crystals/graphene hybrid photodetector indicates the benefit of infrared absorption. The extraordinary response speed of 1.8 ms, photo-responsivity in exceeding 36 AW⁻¹, and figure-of-merit detectivity D^*>2.7×10⁹ Jones have been demonstrated in 2.7 µm at room temperature.