Regensburg 2022 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 25: Poster 1
HL 25.40: Poster
Wednesday, September 7, 2022, 18:00–20:00, P2
Remote Heteroepitaxy of In(x)Ga(1-x)As on Graphene Covered GaAs(001) Substrates — •Tobias Henksmeier1, Friedemann Schulz2, Elias Kluth2, Martin Feneberg2, Rüdiger Goldhahn2, and Dirk Reuter1 — 1Paderborn University, Warburger Str. 100, 33089 Paderborn, Germany — 2Otto von Guericke University, Magdeburg, Universitätsplatz 2, 39106 Magdeburg, Germany
Recently, remote epitaxy on monolayer graphene covered substrates has attracted considerable attention as a way to improve lattice mismatched growth. It was reported that placing a monolayer graphene on a substrate offers a relaxation pathway different to the creation of crystal defects. Here, we present a study on solid source molecular beam epitaxy of In(x)Ga(1-x)As-layers (0<x<0.5) on chemical vapor deposition monolayer-graphene covered GaAs-(001) substrates. We show detailed investigations on the low temperature In(x)Ga(1-x)As nucleation and on the strain relaxation of 200 nm thick In(x)Ga(1-x)As-layers on graphene coved GaAs and for comparison on bare GaAs. The samples were analyzed by atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman-spectroscopy and high-resolution X-ray diffraction measurements (HRXRD). We see the same crystal orientation and similar root-mean-square roughness for films grown on graphene and on bare GaAs substrates. Further, the layers grown on graphene show a more symmetric strain relaxation and a larger degree of strain relaxation compared to films grown on bare GaAs where the strain relaxation is larger along [110].