Regensburg 2022 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 25: Poster 1

HL 25.47: Poster

Wednesday, September 7, 2022, 18:00–20:00, P2

Photoluminescence observation of Erbium implanted semiconductor nanostructures — •Nico Brosda, Cristian Düputell, Arne Ludwig, and Andreas Wieck — Lehrstuhl für angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44801 Bochum, Germany

The rare earth element Erbium is known for its spectral transitions around 1.5 µm. This wavelength region coincides with the absorption minimum of optical fibers. How to maximize the photoluminescence of Er doped semiconductor nanostructure is therefore a reasonable research topic.

The doping of GaAs semiconductor structures was achieved with focussed ion beam implantation. To recover the crystal structure and activate the Er atoms the samples are thermally annealed. Finding the optimal annealing parameters requires PL measurements in the near-infrared regime. A suitable PL setup was build around an InGaAs detector and a He-flow cryostat, allowing to measure the PL signal of Er. A 805 nm laser diode was used for the excitation. Optical parts in the setup were chosen with an antireflection coating for light around 1.5 µm.

The comparison between different annealing respectively implantation parameters allowed to identify values resulting in a brighter PL spectrum of the Er.