Regensburg 2022 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 25: Poster 1
HL 25.50: Poster
Wednesday, September 7, 2022, 18:00–20:00, P2
Manipulating light-emission in direct band gap hexagonal Silicon Germanium nanowire arrays — •David Busse1, Victor van Lange2, Elham Fadaly2, Wouter Peeters2, Marco Vettori2, Jos Haverkort2, Erik Bakkers2, Gregor Koblmüller1, and Jonathan Finley1 — 1Walter Schottky Institut, Garching near Munich, Germany — 2Eindhoven University of Technology, Eindhoven, Netherlands
We present results on the redistribution and enhancement of light within a 2D photonic crystal array formed by a hexagonal array of standing Si1−x−Gex nanowires (NWs). It was previously shown that these NWs are direct bandgap semiconductors when the crystal lattice has a hexagonal crystal structure. Fully 3D FDTD-simulations were performed to calculate the frequency of the photonic bands and their dependence on the lattice pitch and radius of the NW array. Essentially, the peak of the photoluminescence (PL) emission from the Si1−x−Gex NWs at 0.352eV, can be continuously tuned through the dielectric and air photonic band edges by changing lattice pitch and radius. For NW radius r=210nm, length l=6mu and variable distance between the NWs (pitch a = 0.8mu up to 1.95mu) we tune the photonic band edges through NW PL emission. Crucially, for situations close to resonance we observe an increase in the time-integrated PL intensity and transient carrier recombination dynamics measured using time-resolved pump-probe reflectance spectroscopy.