Regensburg 2022 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 25: Poster 1
HL 25.60: Poster
Mittwoch, 7. September 2022, 18:00–20:00, P2
Effects of bias-cooling on charge noise in gated Si/SiGe quantum dots — •Julian Ferrero1, Daniel Schroller1, Thomas Koch1, Viktor Adam1, Ran Xue2, Inga Seidler2, Lars Schreiber2, Hendrik Bluhm2, and Wolfgang Wernsdorfer1 — 1Physikalisches Institut, KIT Karlsruhe — 2II. Physikalisches Institut, RWTH Aachen
Electron spins in gated Si/SiGe quantum dots provide a great potential in scalable quantum-computing platforms due to their long coherence times and wide tunability. However, charge noise in the vicinity of the qubit region decreases the two-qubit gate fidelities that are needed for up-scaled error correction. Furthermore, the devices drift to different working points and need to be retuned regularly. The source of fast charge noise is thought to arise from twolevel fluctuators in the aluminium oxide dielectric, whereas the drift can be caused by slow charging of the silicon cap. A feasible possibility to suppress such noise and drift is the application of a bias voltage on all gates during cool down. This project strives to investigate the effects of different bias-coolings on charge noise using simultaneous current spectroscopy and peak tracking of two single electron transistors. Since the involved processes range on a wide time scale, the noise spectrum is investigated between 50 microhertz and 1 kilohertz.