Regensburg 2022 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 25: Poster 1

HL 25.64: Poster

Wednesday, September 7, 2022, 18:00–20:00, P2

Growth and characterisation of local droplet etched InAs quantum dots in an InGaAs matrix — •Nikolai Spitzer, Arne Ludwig, and Andreas Wieck — Ruhr- Universitaet Bochum, Lehrstuhl fuer Angewandte Festkoerperphysik, Universitaetsstraße 150, 44801 Bochum, Germany

We present a new local droplet etching (LDE) method for selforganized InGaAs quantum dots (QDs). We use gallium droplets to etch on an InGaAs matrix layer and fill the nanoholes with InAs. The impact of the indium concentration in the InGaAs-layer and of the deposited InAs amount after etching is investigated by atomic force microscopy and photoluminescence spectroscopy.