Regensburg 2022 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 25: Poster 1
HL 25.65: Poster
Wednesday, September 7, 2022, 18:00–20:00, P2
Three-photon excitation of InGaN quantum dots — •Viviana Villafane1, Bianca Scaparra1, Manuel Rieger1, Stephan Appel1, Rahul Trivedi2, Tongtong Zhu3, John Jarman3, Rachel Oliver3, Robert Taylor4, Jonathan Finley1, and Kai Mueller1 — 1Walter Schottky Institut, TUM, Garching, Germany — 2Max-Planck-Institute for Quantum Optics, Garching, Germany — 3Department of Materials Science, University of Cambridge, UK — 4Clarendon Laboratory, University of Oxford, UK
Solid-state quantum emitters are prominent examples of systems showing excellent agreement between theoretical predictions and experimental measurements, being commonly taken as evidence that the fundamental physics of quasi two-level quantum emitters is almost fully understood. In our work, we explore multi-photon absorption selection rules in semiconductor quantum dots within the dipole approximation. It can be proven that given a two-level quantum system, if the excitation scheme involves N-photons of the same energy and polarization, either all even or odd resonances are enhanced, based on the parity of the ground and excited states. We demonstrate that semiconductor quantum dots can be excited efficiently in a resonant three-photon process, whilst resonant two-photon excitation is highly suppressed. Time-dependent Floquet theory is used to quantify the strength of the multi-photon processes and model the experimental results. Our resonant three-photon excitation scheme alows us to measure directly the radiative lifetime of InGaN QDs and obtain a greater degree of linear polarization.