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HL: Fachverband Halbleiterphysik

HL 25: Poster 1

HL 25.71: Poster

Mittwoch, 7. September 2022, 18:00–20:00, P2

Heat Radiation of Semiconductor Wafers — •Bastian Schmülling, Timo Kruck, Andreas D. Wieck, and Arne Ludwig — Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Uni Bochum

This work is about the struggles of pyrometer measurements of substrate temperature during molecular beam epitaxy (MBE) growth. During the growth of a typical GaAs wafer, a substrate temperature of 300 to 650 degree celsius is required. In our setup, a wafer is mounted in front of a radiation heater. To measure the substrate temperature, a pyrometer measures the thermal radiation. During growth, the substrate temperature is of utmost importance. However, the reflectivity and thus the emissivity changes with each additional layer deposited and the temperature measured by the pyrometer varies accordingly. These pyrometer measurements can be used to measure the growth rate. We plan to combining reflectometry and pyrometry during growth, to determine the actual temperature of the wafer.