Regensburg 2022 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 25: Poster 1
HL 25.84: Poster
Mittwoch, 7. September 2022, 18:00–20:00, P2
Droplet epitaxy of InGaAs quantum dots for spin-photon interface devices — •Xuelin Jin1,2, David Fricker1,2, Nils Von den driesch1,3, Alexander Pawlis1,3, Renu Rani1,3, Minh Bui1,3, Detlev Grützmacher1,2, and Beata Kardynal1,2 — 1PGI 9, Forschungszentrum Jülich, 52425 Jülich, Germany — 2Department of Physics, RWTH Aachen, 52074 Aachen, Germany — 3PGI 10, Forschungszentrum Jülich, 52425 Jülich, Germany
Abstract. Quantum networks use photonic qubits to send information, that means photonic qubits need to be converted into stationary qubits at the network nodes. A transfer information from a photonic to a spin qubit has been already demonstrated. Here we study the possibility of transferring photonic qubits into spin qubits which offer a potential of scaling into quantum processors, ones in gate-defined quantum dots in GaAs. Since gate-defined quantum dots do not confine holes, a direct conversion of photon qubits into spin qubits in these quantum dots is not possible. Here, we explore the possibility of using self-assembled InGaAs quantum dots grown by droplet epitaxy as an optical interface to the gated quantum dots defined in GaAs. We will discuss the conditions that the heterostructure has to fulfil to facilitate tunable tunnel coupling between the two quantum dots and we will show the progress in its growth and characterisation. In order to maintain the stable operation of the gated quantum dots, we use droplet epitaxy to grow InGaAs QDs. We will show that this method allows us to create quantum dots with energies suitable for tunnel coupling and minimize the impact of the wetting layer on the two-dimensional electron gas.