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HL: Fachverband Halbleiterphysik
HL 25: Poster 1
HL 25.89: Poster
Wednesday, September 7, 2022, 18:00–20:00, P2
Magnetotransport in narrow-gap semiconductors with nanostructured constrictions — •Olivio Chiatti1, Johannes Boy1, Christian Riha1, Christian Heyn2, Wolfgang Hansen2, and Saskia F. Fischer1 — 1Novel Materials Group, Humboldt-Universität zu Berlin, 10099 Berlin, Germany — 2Institut für Nanostruktur- und Festkörperphysik, Universität Hamburg, 20355 Hamburg, Germany
Measurements in magnetic fields are an effective tool to investigate transport properties of low-dimensional electron systems.
We investigate the magnetotransport of semiconductor heterostructures and nanostructures with spin-orbit interaction (SOI), under the influence of in-plane and out-of-plane electric fields.
The nanostructures are quantum point contacts (QPCs) etched in Hall-bars with in-plane gates.
The Hall-bars and the constrictions were defined by micro-laser photolithography and wet-chemical etching from an InGaAs/InAlAs quantum well with an InAs-inserted channel [1].
We have performed transport measurements at low temperatures in the combined QPC and Hall-bar structures in magnetic fields.
We can tune the gate-voltages to control the filling-factor mismatch between bulk Hall-bar and QPC.
We observe a crossover from reflection to transmission of the quantum Hall edge channels at the QPC and a tunneling across the QPC between reflected edge states, which depends on the magnitude and direction of the in-plane electric field.
[1] Chiatti et al., Appl. Phys. Lett. 106, 052102 (2015).