Regensburg 2022 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 26: Quantum Dots and Wires 5: Optics 2
HL 26.3: Talk
Thursday, September 8, 2022, 10:00–10:15, H32
High-quality single-photons from hybrid MOVPE/MBE grown n-i-n quantum-dot structures — •Lukas Wagner1, Tim Strobel1, Marcel Schmidt2, Jonas H. Weber1, Lena Engel1, Andreas D. Wieck2, Michael Jetter1, Simone L. Portalupi1, Arne Ludwig2, and Peter Michler1 — 1Institut für Halbleiteroptik und Funktionelle Grenzflächen (IHFG), Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany — 2Lehrstuhl für angewandte Festkörperphysik, Ruhr-University Bochum, Universitätsstraße 150, 44801 Bochum, Germany
Photonic quantum operations require sources of photons with Fourier-limited linewidth and high brightness. Stark-shift tuning of the emission wavelength can be of interest in upscaling the complexity, employing multiple quantum dots (QDs) tuned at the same emission wavelength. QDs in gated structure can provide a stabilization of the electric field environment, pushing the photon linewidth close to the Fourier limit. In addition, the embedding diode structure can be used to electrically tune the emission wavelength. The growth of self-assembled semiconductor QDs is usually carried out via metal-organic vapor-phase epitaxy (MOVPE) or molecular-beam epitaxy (MBE). This work combines MOVPE and MBE techniques for hybrid growth of gated semiconductor QD samples. This provides spectrally tunable InAs QDs with narrow emission linewidth. High single-photon purity and indistinguishability are proven via Hanbury-Brown and Twiss, and Hong-Ou-Mandel experiments in resonant excitation.