Regensburg 2022 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 3: Quantum Dots and Wires 1: Transport and Electronic Properties

HL 3.10: Vortrag

Montag, 5. September 2022, 12:30–12:45, H32

Optoelectronic properties of GaAs(Sb)-AlGaAs core-shell NW diodes on silicon — •Tobias Schreitmüller, Patrick Jong, Daniel Ruhstorfer, Akhil Ajay, Andreas Thurn, Jonathan Finley, and Gregor Koblmüller — Walter Schottky Institute, Technical University of Munich, 85748 Garching, Germany

The ability to integrate III-V semiconductor nanowires (NW) on the silicon (Si) platform opens many perspectives for advanced nanoelectronic and optoelectronic device applications on-chip. However, for energy-efficient device performance, the design of axial or radial heterostructures, the control of accurate doping properties and the formation of low-resistance ohmic contacts are crucial. In this contribution, we present ongoing developments of radial n-i-p core-multishell NW heterostructures monolithically integrated on the n-Si (111) platform. The NW structure is designed to host n-type doped GaAs(Sb) cores, while the shell is composed of either GaAs homojunctions or (In,Al)GaAs(Sb)-based heterojunctions that define intrinsic and p-type doped regions. We show that n-type conduction is feasible in the Si-doped core by pioneering a novel catalyst-free, vapor-solid growth process of Si-doped GaAs NWs using molecular beam epitaxy (MBE). The n-doped NW cores were then implemented into radial n-i-p NW homo-junction devices to establish electrical contact formation and perform first electroluminescence (EL) experiments. The EL measurements illustrate successful diode characteristics, with luminescence features that are typical for the underlying material properties.