Regensburg 2022 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 3: Quantum Dots and Wires 1: Transport and Electronic Properties
HL 3.9: Vortrag
Montag, 5. September 2022, 12:15–12:30, H32
Heterogeneous III-V nanowire quantum emitters on silicon photonic circuits — •Hyowon Jeong1, Akhil Ajay1, Nitin Mukhundhan1, Marcus Döblinger2, Jonathan J. Finley1, and Gregor Koblmüller1 — 1Walter Schottky Institute & Physics Department, Technische Universität München, Garching, Germany — 2Department of Chemistry, Ludwig-Maximilians-Universität München, Munich, Germany
III-V quantum dots (QDs) act as naturally bright and highly efficient quantum emitters that can generate deterministic single or entangled photons pairs. QDs embedded in a nanowire (NW) serve as a scalable platform for site-selective and geometry-controlled in-situ heterogeneous integration onto photonic waveguides (WG) - a crucial milestone for the realization of a Quantum Photonic Integrated Circuit.
In the first part, we show by numerical modelling how geometrical parameters of a NW and Si-WG design influence the spontaneous emission enhancement of the QD emitter and the in-coupling efficiencies at the NW-WG interface [1]. Preliminary experiments towards the development of an integrated III-V NW-QD system are then presented. Here, we demonstrate a droplet-free site-selective epitaxy of NWs, where first data of GaAsSb/InGaAs axial heterostructures and their distinct luminescence features will be shown. Furthermore, we discuss control of Indium incorporation into the InGaAs axial segment, in order to tune the emission wavelength before optimizing the axial size, progressing towards an axial QD.
[1] N. Mukhundhan, et al., Opt. Express 29, 43068 (2021).