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HL: Fachverband Halbleiterphysik

HL 30: Poster 2

HL 30.11: Poster

Donnerstag, 8. September 2022, 11:00–13:00, P3

GaN/AlGaN/GaN solution gate field effects transistors as pH- and enzymatic sensors — •Genrietta Steingelb, Alexander Hinz, Stephan Figge, and Martin Eickhoff — Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany

A GaN/AlGaN/AlGaN-heterostructure solution gate field effect transistors (SGFETs) as pH-sensors will be presented. We discuss the performance of differential sensors realized by one SGFET with passivated gate and one with a bare GaN cap layer as a gate on one chip. The compensation of drift-effects such as like persistent photocurrent and temperature dependence will be discussed.

We have used such devices to study the time-dependent response of covalently immobilized enzymes on the gate surface towards the presence of their specific substrate molecules with acetylcholinesterase and penicillinase as examples.