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HL: Fachverband Halbleiterphysik

HL 30: Poster 2

HL 30.15: Poster

Donnerstag, 8. September 2022, 11:00–13:00, P3

Molecular beam epitaxy of ScGaN on 6H-SiC — •Aaron Gieß, Fabian Ullmann und Stefan Krischok — Institut für Mikro und Nanotechnologien, Institut für Physik, TU Ilmenau

Group III-nitrides are well-suited semiconductors for optoelectronic and sensor devices. Among them, Sc-containing nitrides are of recent interest as well. In this contribution we report on our present progress in ScGaN PAMBE growth. We grow ScGaN using plasma-assisted molecular beam epitaxy on Si-faced 6H-SiC. Prior growth the SiC-surface is cleaned by a HF-Dip and a gallium anneal. Compared to GaN growth the implementation of scandium poses significant challenges: (i) ScN inclines to cubic growth and (ii) Gallium tends to form liquid droplets. In order to find optimal growth conditions, parameters such as substrate-temperature and nitrogen as well as Sc and Ga flux have been systematically varied. During growth, reflection high-energy electron diffraction (RHEED) diffraction patterns have been monitored. Further characterization has been performed by X-Ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). In future we plan systematic studies on the electronic properties of high quality epitaxial ScGaN thin films as well as their interaction with molecules.