Regensburg 2022 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 30: Poster 2
HL 30.18: Poster
Thursday, September 8, 2022, 11:00–13:00, P3
Nominally identical GaInN/GaN single quantum wells : variations of optical and structural properties — •Rodrigo De Vasconcellos Lourenco1,2, Malte Schrader1,2, Uwe Rossow1, Heiko Bremers1,2, and Andreas Hangleiter1,2 — 1Institute of Applied Physics, Technische Universität Braunschweig, Germany — 2Laboratory for Emerging Nanometrology, Braunschweig, Germany
We have unexpectedly observed differences in luminescence and structural properties in GaInN/GaN single quantum wells (SQW), grown under nominally identical conditions. This may be related to specific growth condition such as variation in substrate temperature or doping level; or substrate characteristics, e.g. bowing and offcut; as well as the status of the growth system. The samples were grown in low-pressure metalorganic vapour-phase epitaxy (MOVPE) on c-plane sapphire substrate. The differences in emission wavelength of the SQWs suggest that either there is a discrepancy in In content or in doping level. From the reference multiple quantum wells samples, a variation of 5 % in In concentration was observed. This fluctuation in In content may explain variations in the lattice constants of the SQWs measured by high-resolution X-ray diffraction (HRXRD). We aim to understand how the In content and among other attributes could influence the internal quantum efficiency at room temperature of GaInN/GaN SQWs ranging from 0.6 to 47%.