Regensburg 2022 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 30: Poster 2
HL 30.26: Poster
Donnerstag, 8. September 2022, 11:00–13:00, P3
Porosity Analysis of Mesoporous Silicon by SEM Images of Polished Cross Sections — •Stefanie Lawundy1,2, Waldemar Schreiber1, and Stefan Janz1 — 1Fraunhofer ISE, Freiburg i. Br., Germany — 2University of Freiburg, Germany
Porous silicon fabricated by electrochemical etching is a material known for decades with a wide field of applications ranging from photovoltaics to medicine. Nevertheless, the determination of its key property porosity is still an issue that is to be refined.
Especially, the spatially resolved porosity analysis of layered mesoporous silicon stacks are challenging due to the small structures of only about 10 nm. Current measurement techniques as gas adsorption are not appropriate for such structures since they cannot fully penetrate the pores, cannot resolve the porosity profile over layer depth and lead to no information about the pore morphology.
In order to account for these challenges a new approach has been developed. It is based on the analysis of SEM cross section images where contrast and homogeneity are enhanced by a preceding polishing procedure. Pores are defined by using an image processing software and porosity profiles are calculated.
Results of this procedure are assumed to be an important step towards an accurate description of the etching process.