Regensburg 2022 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 30: Poster 2
HL 30.31: Poster
Donnerstag, 8. September 2022, 11:00–13:00, P3
Electron Beam Induced Current (EBIC) Investigations of Femtosecond Laser Sulfur Hyperdoped Silicon — •Mengru Sun1, Tobias Westphal1, Simon Paulus2, Sören Schäfer2, Stefan Kontermann2, and Michael Seibt1 — 1University of Goettingen, IV. Physical Institute, Göttingen, Germany — 2Institute for Microtechnologies (IMtech), University of Applied Sciences Rhein- Main, Rüsselsheim, Germany
S hyperdoped Si formed by fs-laser irradiation improves the absorption of the Si-based optoelectronic devices to infrared wavelengths. A p-n junction is created between the B doped p-type Si wafer and the S hyperdoped n-type region produced as a result of fs-laser pulse irradiation of the Si wafer surface under SF6 atmosphere. The structural and electronic properties of the fs-laser hyperdoped S depend strongly on the laser-processing parameters such as the number of pulses per spot and laser fluence. In this contribution, we focus on S hyperdoped Si fabricated via fs-laser irradiation at 800nm wavelength and various laser processing parameters. Electron Beam Induced Current (EBIC) performed in plan-view and cross-section geometry is used for characterizing the electronic properties of the sample like excess minority carrier diffusion length. Combining EBIC with SEM images, the correlations between electronic properties and the surface textures can be observed. The results of this work show the important role of processing parameters on the surface macro- and microstructure. EBIC data further indicates the different behaviors of the excess carriers within the ridges and the valleys at the surface.