Regensburg 2022 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 36: Materials and Devices for Quantum Technology 2

HL 36.5: Vortrag

Donnerstag, 8. September 2022, 16:00–16:15, H36

Focused ion beam implantation and luminescence of erbium ions in semiconductor nanostructures — •Christian Düputell¹, Patrick Lindner², Varvara Foteinou³, Yujiao Li⁴, Jörg Debus², Arne Ludwig¹, and Andreas D. Wieck¹ — ¹Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum — ²Experimentelle Physik 2, TU Dortmund — ³RUBION, Ruhr-Universität Bochum — ⁴ZGH, Ruhr-Universität Bochum

We report on focused ion beam (FIB) implantation of erbium ions in semiconductor nanostructures. Semiconductor nanostructures have attracted a lot of attention due to their unique optical, electrical and mechanical properties. Focused ion beam is an elegant method to tune these specific properties. This contribution lines out the implantation processes and the methods used to characterize the samples after implantation. Erbium is implanted in various semiconductor nanostructures in its 3+ state using an alloy liquid metal ion source. Furthermore, a sputter cathode source is used to implant erbium(III) oxide. Implantation is done at room temperature as well as at elevated temperatures to reduce radiation damage. The implanted ion distribution is simulated by SRIM and measured by atom probe tomography. After the implantation, the samples are annealed under nitrogen gas using a rapid thermal annealing technique. Photoluminescence measurements on erbium luminescence are carried out at cryogenic temperatures (10 K) as a function of the annealing and implantation parameters. The quality of the samples is then rated according to emission intensity of the important telecom-C-band wavelength of 1.54 µm.