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HL: Fachverband Halbleiterphysik

HL 40: THz and MIR Physics in Semiconductors

HL 40.3: Vortrag

Freitag, 9. September 2022, 10:00–10:15, H33

Elastic and inelastic exciton scattering in InGaAs multi-quantum wells — •Daniel Anders, Markus Stein, and Sangam Chatterjee — Institute of Experimental Physics I and Center for Materials Research (LAMA), Justus-Liebig-University Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen, Germany

The interaction of optically injected excitons amongst each other as well as with electrons is one of the most fundamental questions in semiconductor physics. In the past, scattering processes in semiconductors between charge carriers and excitons have been studied intensively using a wide variety of experimental methods, e.g., four-wave-mixing spectroscopy, time-resolved photoluminescence spectroscopy, or optical pump - optical probe spectroscopy. In contrast to the aforementioned methods optical pump - terahertz probe spectroscopy allows to distinguish between elastic and the destructive inelastic scattering processes of excitons. While the linewidth of the intraexcitonic resonance provides a measure for the total scattering rate of all scattering processes, the change of the intraexcitonic oscillator strength is only sensitive to inelastic scattering processes. In this work, we compare exciton-electron and exciton-exciton scattering and determine the respective contributions of elastic and inelastic scattering processes.