Regensburg 2022 – wissenschaftliches Programm
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KFM: Fachverband Kristalline Festkörper und deren Mikrostruktur
KFM 16: Oxide Semiconductors (joint session HL/KFM)
KFM 16.5: Vortrag
Mittwoch, 7. September 2022, 10:30–10:45, H33
Phonons, Isotope Effects, and Point Defects in β-Ga2O3 — •Benjamin M. Janzen1, Piero Mazzolini2,3, Roland Gillen4, Andreas Falkenstein5, Vivien F. S. Peltason1, Hans Tornatzky1, Daniel Cierpinsky1, Andrea Ardenghi2, Manfred Martin5, Janina Maultzsch4, Roberto Fornari2,3, Zbigniew Galazka6, Oliver Bierwagen2, and Markus R. Wagner1 — 1Technische Universität Berlin, Institute of Solid State Physics, Berlin, Germany — 2Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V, Germany — 3Department of Mathematical, Physical and Computer Sciences, University of Parma, Italy — 4Chair of Experimental Physics, Friedrich-Alexander-Universität Erlangen-Nürnberg, Germany — 5Institute of Physical Chemistry, RWTH Aachen University, Germany — 6Leibniz-Institut für Kristallzüchtung, Berlin, Germany
We present a combined experimental and theoretical study of lattice vibrations in a homoepitaxial β-Ga2O3 thin film grown by MBE with different oxygen isotopes (16O, 18O). Using polarized first- and second order micro-Raman spectroscopy, we identified all 15 first-order Raman modes of β-Ga2O3. In combination with density functional perturbation theory calculations, we identify the atomistic origins (Ga-Ga, Ga-O or O-O) of all Raman active phonon modes in β-Ga2O3 by quantifying the isotopically-induced relative frequency shifts of the individual Raman modes and investigate the presence of point defects on specific lattice sites.