Regensburg 2022 – scientific programme
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KFM: Fachverband Kristalline Festkörper und deren Mikrostruktur
KFM 16: Oxide Semiconductors (joint session HL/KFM)
KFM 16.6: Talk
Wednesday, September 7, 2022, 10:45–11:00, H33
Epitaxial ZnO thin films and NWs — •Maximilian Kolhep1, Margit Zacharias1, and Jürgen Bläsing2 — 1Laboratory for Nanotechnology, Department of Microsystems Engineering (IMTEK), University of Freiburg, Freiburg 79110, Germany — 2Otto-von-Guericke-University Magdeburg, Institute of Physics, Magdeburg, Germany
Due to its high piezoelectric coefficient and direct band gap of 3.37 eV, ZnO and especially ZnO nanowires are of interest for numerous future applications. We demonstrate the epitaxial growth of ZnO on Si(111) substrates using an AlN buffer layer by atomic layer deposition (ALD). ALD is a promising technique as it allows the deposition of extremely thin films with precise thickness control and excellent conformality over large areas. The crystalline quality of ZnO thin films determined by XRD increases with increasing deposition temperature and an additional post-annealing step. These thin films have a great potential as a substrate for the subsequent catalyst-free and epitaxial growth of ZnO NWs by CVD. The influence of growth parameters on the morphology of ZnO NWs will be discussed.