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MA: Fachverband Magnetismus

MA 19: Poster 1

MA 19.62: Poster

Dienstag, 6. September 2022, 17:30–20:00, P2

Direct imaging of current-induced antiferromagnetic switching in NiO revealing a pure thermomagnetoelastic switching mechanism — Hendrik Meer¹, Felix Schreiber¹, •Christin Schmitt¹, Rafael Ramos^2,3, Eiji Saitoh^2,4, Olena Gomonay¹, Jairo Sinova¹, Lorenzo Baldrati¹, and Mathias Kläui¹ — ¹Institute of Physics, Johannes Gutenberg-University Mainz, Mainz, Germany — ²CIQUS, Departamento de Quimica-Fisica, Universidade de Santiago de Compostela, Santiago de Compostela, Spain — ³WPI-Advanced Institute for Materials Research, Tohoku University, Sendai, Japan — ⁴Department of Applied Physics, The University of Tokyo, Tokyo, Japan

Antiferromagnetic spintronics is considered as a disruptive approach, enabling scalable ultrafast and efficient spintronic devices. We observe current-induced magnetic switching of insulating antiferromagnet/heavy metal bilayers. Previously, different reorientations of the Néel order for the same current direction were reported for different device geometries and different switching mechanisms were proposed. Here, we combine concurrent electrical readout and optical imaging of the switching of antiferromagnetic domains with simulations of the current-induced temperature and strain gradients. By comparing the switching in specially engineered NiO/Pt device and pulsing geometries, we can rule out dominating spin-orbit torque based mechanisms and identify a thermomagnetoelastic mechanism to switch the antiferromagnetic domains, reconciling previous reports.