Regensburg 2022 – scientific programme
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MM: Fachverband Metall- und Materialphysik
MM 18: Poster Session 2
MM 18.37: Poster
Tuesday, September 6, 2022, 17:30–20:00, P2
Peculiarities of electron transport and resistive switching in point contacts on TiSe2 and TiSeS. — Dmytro Bashlakov1, •Oksana Kvitnitskaya1, Yuliia Shemerliuk2, Saicharan Aswartham2, Dmitri Efremov2, Bernd Büchner2,3, and Yurii Naidyuk1 — 1B. Verkin Institute for Low Temperature Physics and Engineering, NAS of Ukraine, Kharkiv, Ukraine — 2Institute for Solid State Research, IFW Dresden, Dresden, Germany — 3Institut für Festkörper- und Materialphysik and Würzburg-Dresden Cluster of Excellence ct.qmat, Technische Universität Dresden, Dresden, Germany
We report resistive switching in voltage biased point contacts (PCs) based on the transition metals chalcogenides TiSe2 and TiSeS. The switching is taking place between a low resistive *metallic-type* state and a high resistive *semiconducting-type* state by applying bias voltage (<0.4V), while reverse switching takes place by applying voltage of opposite polarity. The difference in resistance between these two states can reach of about two orders of magnitude at helium temperature. The origin of the effect can be attributed to the electric field induced change of stoichiometry in PC core due to drift of Se vacancies. Additionally, we demonstrated, that heating takes place in PC core, which can facilitate the electric field induced effect. At the same time we did not found any evidence for CDW spectral features in our PC spectra for TiSe2. The observed resistive switching allows to propose TiSe2 and TiSeS as the promising materials, e.g., for non-volatile resistive random access memory (ReRAM) engineering.