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MM: Fachverband Metall- und Materialphysik

MM 21: Transport in Materials: Thermal transport

MM 21.10: Vortrag

Mittwoch, 7. September 2022, 12:45–13:00, H45

Self-diffusion in ge2sb2te5 thin films — •qingmei gong, sergiy divinski, and gerhard wilde — University of Münster, Institute of Materials Physics, Wilhelm-Klemm-str. 10, 48149 Münster, Germany

Phase change memory devices (PCM) are considered as one of the most mature technologies among the emerging non-volatile memories and are based on the reversibility of the amorphous-to-crystalline transition within a nanosecond timescale. Ge2Sb2Te5 is the most widely studied composition. In this work, the self-diffusion in Ge2Sb2Te5 thin films is measured using secondary ion mass spectroscopy (SIMS) and applying the highly enriched natural 122Te isotope. A 200 nm thick layer of Ge2Sb2Te5 was deposited on a Si substrate by DC magnetron sputtering at room temperature. Subsequently, a thin layer of 122Te was deposited on as-prepared Ge2Sb2Te5/Si samples using physical vapor deposition. In the as-deposited state, Ge2Sb2Te5 was amorphous as confirmed by XRD and transmission electron microscopy. The Te diffusion coefficients in Ge2Sb2Te5 were estimated from SIMS measurements after annealing at different temperatures below crystallization onset.