Regensburg 2022 – scientific programme
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O: Fachverband Oberflächenphysik
O 18: Poster Monday: 2D Materials 1
O 18.11: Poster
Monday, September 5, 2022, 18:00–20:00, P4
Buffer Layer Characterization of Epitaxial Graphene on Silicon Carbide with Scanning Tunneling Microscopy — •Benno Harling1, Anna Sinterhauf1, Peter Richter2, Philip Schädlich2, Thomas Seyller2, and Martin Wenderoth1 — 1IV. Physikalisches Institut, Georg-August-Universität Göttingen, Germany — 2Institut für Physik, Technische Universität Chemnitz, Germany
In this contribution, we present a scanning tunneling microscopy study on the buffer layer of epitaxial graphene on 6H-silicon carbide (SiC) at 8 K and room temperature in UHV. The local configurations and properties of the buffer layer still leave many open questions concerning the interactions between graphene and substrate. Our goal is to disentangle the contributions of the graphene and the underlying buffer layer to the tunneling current on a local scale and to establish an understanding of the responsible mechanisms. We employ multibias imaging to investigate buffer layer contributions to the tunneling current. This measurement mode takes quasi-simultaneous STM images line per line at given bias voltages resulting in a connected stack of topography maps. This allows to observe the changes of the topography in dependency of the applied bias voltage, with much lower dependency on tip modifications while scanning. We connect local corrugation changes to relative heights and the overall corrugation tendency within the stack. Financial support of the Deutsche Forschungsgemeinschaft (DFG) is given by project We 1889/13-1 and We 1889/14-1.